HAN X, GUO H H, DAI X D, et al. Preparation and performance study of 110 kV polypropylene-based semiconductive shielding materials[J]. Wire & Cable, 2026, 69(3): 1-7. DOI: 10.16105/j.dxdl.1672-6901.20250248
    Citation: HAN X, GUO H H, DAI X D, et al. Preparation and performance study of 110 kV polypropylene-based semiconductive shielding materials[J]. Wire & Cable, 2026, 69(3): 1-7. DOI: 10.16105/j.dxdl.1672-6901.20250248

    Preparation and Performance Study of 110 kV Polypropylene-Based Semiconductive Shielding Materials

    • Two types of low-temperature resistant semiconductive shielding materials withstanding –25 ℃ and –40 ℃ were prepared to develop polypropylene-based semiconductive shielding materials suitable for thermoplastic 110 kV polypropylene insulated cables. After the samples were prepared by internal mixing and sheet pressing processes, the low-temperature resistance, dispersion of conductive carbon black in the shielding materials, surface smoothness, volume resistivity and mechanical properties before and after aging, rheological properties, peelability, and thermal stability were investigated. The results showed that excellent compatibility, rheological properties, matching properties, and carbon black dispersion were demonstrated by both semiconductive shielding materials. The electrical-mechanical-thermal properties of both materials were found to meet the technical requirements, and they could be used as 110 kV polypropylene-based semiconductive shielding materials. An important theoretical basis was provided for the subsequent application of polypropylene-based semiconductive shielding materials.
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